Технічний опис IPA65R310CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 440µA, Supplier Device Package: PG-TO220-3-111, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції IPA65R310CFDXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPA65R310CFDXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 11.4A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO220-3-111 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
 |
IPA65R310CFDXKSA1 | INFINEON |
Description: INFINEON - IPA65R310CFDXKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 11.4 A, 0.28 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 11.4 Qualifikation: - Verlustleistung Pd: 32 Gate-Source-Schwellenspannung, max.: 4 Verlustleistung: 32 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: CoolMOS CFD2 Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.28 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.28 SVHC: No SVHC (08-Jul-2021) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPA65R310CFDXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 11.4A 3-Pin(3+Tab) TO-220FP Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| IPA65R310CFDXKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 650V 11.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IPA65R310CFDXKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPA65R310CFDXKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 11.4 A, 0.28 ohm, TO-220FP, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 11.4
Qualifikation: -
Verlustleistung Pd: 32
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 32
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3
Produktpalette: CoolMOS CFD2
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.28
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.28
SVHC: No SVHC (08-Jul-2021)
Description: INFINEON - IPA65R310CFDXKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 11.4 A, 0.28 ohm, TO-220FP, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 11.4
Qualifikation: -
Verlustleistung Pd: 32
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 32
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3
Produktpalette: CoolMOS CFD2
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.28
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.28
SVHC: No SVHC (08-Jul-2021)
товару немає в наявності
В кошику
од. на суму грн.
| IPA65R310CFDXKSA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 11.4A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 11.4A 3-Pin(3+Tab) TO-220FP Tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.