| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.20 грн |
| 10+ | 56.92 грн |
| 100+ | 45.49 грн |
| 500+ | 45.42 грн |
| 2500+ | 39.49 грн |
| 5000+ | 37.83 грн |
| 10000+ | 35.97 грн |
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Технічний опис IPA70R900P7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V, Power Dissipation (Max): 20.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V.
Інші пропозиції IPA70R900P7SXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPA70R900P7SXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 700V 6A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Power Dissipation (Max): 20.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| IPA70R900P7SXKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.