IPA80R460CEXKSA2 Infineon Technologies

Description: MOSFET N-CH 800V 10.8A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 680µA, Supplier Device Package: PG-TO220-3-31, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.