IPA95R310PFD7XKSA1 Infineon Technologies

Description: MOSFET N-CH 950V 8.7A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-313, Vgs(th) (Max) @ Id: 3.5V @ 520µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.