IPAN60R180P7SXKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 18A TO220-FP, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 4V @ 280µA, Power Dissipation (Max): 26W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.