IPAN60R650CEXKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 9.9A TO220, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 3.5V @ 200µA, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.