| Кількість | Ціна |
|---|---|
| 3+ | 158.50 грн |
| 10+ | 71.63 грн |
| 100+ | 51.98 грн |
| 450+ | 45.43 грн |
| 900+ | 40.55 грн |
| 2700+ | 40.34 грн |
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Технічний опис IPAW60R180P7SXKSA1 Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 280µA, Power Dissipation (Max): 26W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V.
Інші пропозиції IPAW60R180P7SXKSA1 за ціною від 66.22 грн до 161.47 грн
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IPAW60R180P7SXKSA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CHANNEL 650V 18A TO220Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 4V @ 280µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
на замовлення 310 шт: термін постачання 21-31 дні (днів) |
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| IPAW60R180P7SXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 26W Case: TO220-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 25nC Kind of channel: enhancement |
товару немає в наявності |