IPAW60R280CEXKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 19.3A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Variant, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 430µA, Supplier Device Package: PG-TO220 Full Pack, Wide Creepage, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.