| Кількість | Ціна |
|---|---|
| 2+ | 222.84 грн |
| 10+ | 151.57 грн |
| 100+ | 98.68 грн |
| 500+ | 65.48 грн |
| 800+ | 65.13 грн |
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Технічний опис IPB012N04NF2SATMA1 Infineon Technologies
Description: TRENCH .
Інші пропозиції IPB012N04NF2SATMA1 за ціною від 107.36 грн до 245.81 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB012N04NF2SATMA1 | Infineon Technologies |
 Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 189µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V |
на замовлення 795 шт: термін постачання 21-31 дні (днів) |
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| IPB012N04NF2SATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 189µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 189µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 245.81 грн |
| 10+ | 154.32 грн |
| 100+ | 107.36 грн |