IPB022N12NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.6V @ 275µA, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).