IPB023N03LF2SATMA1 Infineon Technologies
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 216.66 грн |
| 10+ | 138.03 грн |
| 100+ | 83.04 грн |
| 500+ | 73.38 грн |
| 800+ | 61.45 грн |
| 2400+ | 57.98 грн |
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Технічний опис IPB023N03LF2SATMA1 Infineon Technologies
Description: IPB023N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V, Power Dissipation (Max): 3.8W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 60µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V.
Інші пропозиції IPB023N03LF2SATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPB023N03LF2SATMA1 | Виробник : Infineon Technologies |
 Description: IPB023N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
товару немає в наявності |
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IPB023N03LF2SATMA1 | Виробник : Infineon Technologies |
Description: IPB023N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
товару немає в наявності |