IPB023N04NF2SATMA1 Infineon Technologies

Виробник: Infineon Technologies
Description: TRENCH <= 40V
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)

Виробник: Infineon Technologies
Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)