IPB024N08N5ATMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 289.45 грн |
| 10+ | 239.92 грн |
| 25+ | 196.65 грн |
| 100+ | 168.45 грн |
| 250+ | 159.29 грн |
| 500+ | 149.42 грн |
| 1000+ | 127.57 грн |
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Технічний опис IPB024N08N5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 3.8V @ 154µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IPB024N08N5ATMA1 за ціною від 130.42 грн до 326.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPB024N08N5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.8V @ 154µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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| IPB024N08N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 326.69 грн |
| 10+ | 208.30 грн |
| 100+ | 148.06 грн |
| 500+ | 130.42 грн |