IPB025N08N3 G Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 369.68 грн |
| 10+ | 231.82 грн |
| 100+ | 160.85 грн |
| 500+ | 146.35 грн |
| 1000+ | 137.38 грн |
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Технічний опис IPB025N08N3 G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.5V @ 270µA, Power Dissipation (Max): 300W (Tc).
Інші пропозиції IPB025N08N3 G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IPB025N08N3 G | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETRds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 270µA Power Dissipation (Max): 300W (Tc) |
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| IPB025N08N3 G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Power Dissipation (Max): 300W (Tc)
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Power Dissipation (Max): 300W (Tc)
товару немає в наявності
В кошику
од. на суму грн.