IPB054N08N3GATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1000+ | 60.31 грн |
2000+ | 55.17 грн |
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Технічний опис IPB054N08N3GATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V.
Інші пропозиції IPB054N08N3GATMA1 за ціною від 51.67 грн до 137.08 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPB054N08N3GATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V |
на замовлення 2888 шт: термін постачання 21-31 дні (днів) |
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IPB054N08N3GATMA1 | Виробник : Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 |
на замовлення 3377 шт: термін постачання 21-30 дні (днів) |
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IPB054N08N3GATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IPB054N08N3GATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.4mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 80A Power dissipation: 150W Polarisation: unipolar Drain-source voltage: 80V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 кількість в упаковці: 1 шт |
товар відсутній |
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IPB054N08N3GATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.4mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 80A Power dissipation: 150W Polarisation: unipolar Drain-source voltage: 80V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 |
товар відсутній |