Продукція > INFINEON TECHNOLOGIES > IPB100N06S2L05ATMA2

IPB100N06S2L05ATMA2 Infineon Technologies

Name: IPB100N06S2L05ATMA2
Brand: INFINEON TECHNOLOGIES
SKU: 459848233-1
Price: 358.51 UAH
Availability: BackOrder

Виробник: Infineon Technologies
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис IPB100N06S2L05ATMA2 Infineon Technologies

Description: MOSFET N-CH 55V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V.

Інші пропозиції IPB100N06S2L05ATMA2

Назва	Виробник	Інформація	Доступність	Ціна
IPB100N06S2L05ATMA2	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement Technology: OptiMOS™ кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
IPB100N06S2L05ATMA2	Виробник : Infineon Technologies	Description: MOSFET N-CH 55V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IPB100N06S2L05ATMA2	Виробник : Infineon Technologies	Description: MOSFET N-CH 55V 100A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IPB100N06S2L05ATMA2	Виробник : Infineon Technologies	MOSFET MOSFET_)40V 60V)	товару немає в наявності	В кошику од. на суму грн.
IPB100N06S2L05ATMA2	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement Technology: OptiMOS™	товару немає в наявності	В кошику од. на суму грн.