Технічний опис IPB10N03LB infineon
Description: MOSFET N-CH 30V 50A TO263-3, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 2V @ 20µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V.
Інші пропозиції IPB10N03LB
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IPB10N03LB | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO263-3Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
IPB10N03LB | Infineon Technologies |
MOSFET N-KANAL POWER MOS |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB10N03LB |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO263-3
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Description: MOSFET N-CH 30V 50A TO263-3
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
товару немає в наявності
В кошику
од. на суму грн.
| IPB10N03LB |
![]() |
Виробник: Infineon Technologies
MOSFET N-KANAL POWER MOS
MOSFET N-KANAL POWER MOS
товару немає в наявності
В кошику
од. на суму грн.




