Технічний опис IPB110N06LG infineon
Description: MOSFET N-CH 60V 78A TO-263, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2V @ 94µA, Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Cut Tape (CT).
Інші пропозиції IPB110N06LG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPB110N06L G | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 60V 78A TO-263Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2V @ 94µA Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |