IPB117N20NFDATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
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Технічний опис IPB117N20NFDATMA1 Infineon Technologies
Description: MOSFET N-CH 200V 84A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V.
Інші пропозиції IPB117N20NFDATMA1 за ціною від 206.46 грн до 546.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPB117N20NFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 84A TO263-3Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
на замовлення 1575 шт: термін постачання 21-31 дні (днів) |
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IPB117N20NFDATMA1 | Infineon Technologies |
MOSFETs N-Ch 200V 84A D2PAK-2 |
на замовлення 2431 шт: термін постачання 21-30 дні (днів) |
|
| IPB117N20NFDATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 490.03 грн |
| 10+ | 344.44 грн |
| 100+ | 260.21 грн |
| 500+ | 206.46 грн |
| IPB117N20NFDATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs N-Ch 200V 84A D2PAK-2
MOSFETs N-Ch 200V 84A D2PAK-2
на замовлення 2431 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 546.83 грн |
| 10+ | 397.17 грн |
| 25+ | 334.09 грн |
| 100+ | 262.20 грн |
| 250+ | 260.08 грн |
| 500+ | 241.76 грн |



