IPB120N04S3-02 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис IPB120N04S3-02 Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4V @ 230µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IPB120N04S3-02
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPB120N04S3-02 | Infineon Technologies |
Description: MOSFET N-CH 40V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPB120N04S3-02 | Infineon Technologies |
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB120N04S3-02 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPB120N04S3-02 |
|
Виробник: Infineon Technologies
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T
товару немає в наявності
В кошику
од. на суму грн.