Технічний опис IPB120N06S4-02 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 120A, Power dissipation: 188W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 2.4mΩ, Mounting: SMD, Gate charge: 150nC, Kind of channel: enhancement, Technology: OptiMOS™ T2.
Інші пропозиції IPB120N06S4-02
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPB120N06S402ATMA2 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB120N06S402ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
товару немає в наявності
В кошику
од. на суму грн.