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IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2 Infineon Technologies

Infineon_I120N06S4_H1_DS_v01_00_en-1226654.pdf
Виробник: Infineon Technologies
MOSFETs N-Ch 60V 120A D2PAK-2
на замовлення 871 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
1+339.88 грн
10+281.83 грн
25+236.10 грн
100+229.88 грн
250+226.43 грн
500+216.77 грн
1000+120.12 грн
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Технічний опис IPB120N06S4H1ATMA2 Infineon Technologies

Description: MOSFET N-CH 60V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції IPB120N06S4H1ATMA2

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.