IPB120P04P4L03ATMA1 Infineon Technologies

Description: MOSFET P-CH 40V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 2.2V @ 340µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).