Технічний опис IPB13N03LB infineon
Description: MOSFET N-CH 30V 30A D2PAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 2V @ 20µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
Інші пропозиції IPB13N03LB
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IPB13N03LB | Infineon Technologies |
Description: MOSFET N-CH 30V 30A D2PAKPackaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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В кошику од. на суму грн. |
| IPB13N03LB |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
товару немає в наявності
В кошику
од. на суму грн.



