IPB156N22NFDATMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 539.43 грн |
| 10+ | 445.80 грн |
| 25+ | 351.71 грн |
| 100+ | 322.81 грн |
| 250+ | 303.78 грн |
| 500+ | 285.45 грн |
| 1000+ | 256.56 грн |
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Технічний опис IPB156N22NFDATMA1 Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 220 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110.
Інші пропозиції IPB156N22NFDATMA1 за ціною від 241.16 грн до 600.25 грн
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IPB156N22NFDATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 220V 72A TO263-3Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 220 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 |
на замовлення 1012 шт: термін постачання 21-31 дні (днів) |
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| IPB156N22NFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 220 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Description: MOSFET N-CH 220V 72A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 220 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
на замовлення 1012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 600.25 грн |
| 10+ | 393.46 грн |
| 100+ | 289.03 грн |
| 500+ | 241.16 грн |