IPB240N03S4LR9ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 24485 шт:
термін постачання 21-31 дні (днів)
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Технічний опис IPB240N03S4LR9ATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 180µA, Supplier Device Package: PG-TO263-7-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPB240N03S4LR9ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPB240N03S4LR9ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 30V 240A Automotive 7-Pin(6+Tab) D2PAK T/R |
товар відсутній |
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IPB240N03S4LR9ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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IPB240N03S4LR9ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
товар відсутній |