Технічний опис IPB25N06S3L-22 infineon
Description: MOSFET N-CH 55V 25A TO263-3, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2.2V @ 20µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 21.3mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції IPB25N06S3L-22
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IPB25N06S3L-22 | Infineon Technologies |
Description: MOSFET N-CH 55V 25A TO263-3Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2.2V @ 20µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 21.3mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB25N06S3L-22 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 25A TO263-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 55V 25A TO263-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.



