| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.88 грн |
| 10+ | 142.90 грн |
| 100+ | 100.10 грн |
| 500+ | 82.15 грн |
| 1000+ | 67.72 грн |
| 2000+ | 62.75 грн |
| 5000+ | 60.68 грн |
Відгуки про товар
Написати відгук
Технічний опис IPB45P03P4L11ATMA2 Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +5V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2V @ 85µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V.
Інші пропозиції IPB45P03P4L11ATMA2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPB45P03P4L11ATMA2 | Infineon Technologies |
 Description: MOSFET_(20V 40V) PG-TO263-3Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +5V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2V @ 85µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| IPB45P03P4L11ATMA2 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.