Технічний опис IPB50R250CPATMA1 Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 520µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V.
Інші пропозиції IPB50R250CPATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IPB50R250CPATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V кількість в упаковці: 1 шт |
товару немає в наявності |
|
 |
IPB50R250CPATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 550V 13A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V |
товару немає в наявності |
|
|
|
IPB50R250CPATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
товару немає в наявності |