IPB60R165CPATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 1000+ | 122.37 грн |
| 2000+ | 110.63 грн |
| 3000+ | 109.14 грн |
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Технічний опис IPB60R165CPATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 790µA, Supplier Device Package: PG-TO263-3-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V.
Інші пропозиції IPB60R165CPATMA1 за ціною від 117.00 грн до 355.23 грн
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IPB60R165CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 21A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: PG-TO263-3-2 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
на замовлення 5804 шт: термін постачання 21-31 дні (днів) |
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IPB60R165CPATMA1 | Infineon Technologies |
MOSFETs N-Ch 650V 21A D2PAK-2 CoolMOS CP |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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| IPB60R165CPATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 5804 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 338.58 грн |
| 10+ | 215.71 грн |
| 100+ | 153.12 грн |
| 500+ | 125.37 грн |
| IPB60R165CPATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 650V 21A D2PAK-2 CoolMOS CP
MOSFETs N-Ch 650V 21A D2PAK-2 CoolMOS CP
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 355.23 грн |
| 10+ | 231.82 грн |
| 100+ | 143.08 грн |
| 500+ | 124.75 грн |
| 1000+ | 117.00 грн |