IPB65R099C6ATMA1

IPB65R099C6ATMA1 Infineon Technologies


ipa65r099c6.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R
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Технічний опис IPB65R099C6ATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 38A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO263-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V.

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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Виробник : Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Виробник : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
кількість в упаковці: 1 шт
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Виробник : Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Виробник : Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Виробник : Infineon Technologies Infineon-IPB65R099C6-DS-v02_00-en-1731736.pdf MOSFET N-Ch 700V 115A D2PAK-2
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Виробник : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
товару немає в наявності
В кошику  од. на суму  грн.