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IPB65R190C7ATMA1 Infineon Technologies

Name: IPB65R190C7ATMA1
Brand: INFINEON TECHNOLOGIES
SKU: 459848286-1
Price: 295.99 UAH
Availability: BackOrder

3635ds_ipb65r190c7_2_1.pdffolderiddb3a3043163797a6011637d4bae7003bfil.pdf

Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) D2PAK T/R

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Технічний опис IPB65R190C7ATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 13A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 290µA, Supplier Device Package: PG-TO263-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V.

Інші пропозиції IPB65R190C7ATMA1

Назва	Виробник	Інформація	Доступність	Ціна
IPB65R190C7ATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
IPB65R190C7ATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 650V 13A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 290µA Supplier Device Package: PG-TO263-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V	товару немає в наявності	В кошику од. на суму грн.
IPB65R190C7ATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 650V 13A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 290µA Supplier Device Package: PG-TO263-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V	товару немає в наявності	В кошику од. на суму грн.
IPB65R190C7ATMA1	Виробник : Infineon Technologies	MOSFETs N-Ch 700V 49A D2PAK-2	товару немає в наявності	В кошику од. на суму грн.
IPB65R190C7ATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.