Технічний опис IPB80N06S3L-06 infineon
Description: MOSFET N-CH 55V 80A TO263-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2.2V @ 80µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V.
Інші пропозиції IPB80N06S3L-06
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IPB80N06S3L-06 | Infineon Technologies |
 Description: MOSFET N-CH 55V 80A TO263-3Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2.2V @ 80µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
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IPB80N06S3L-06 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2.2V @ 80µA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
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В кошику од. на суму грн. |
| IPB80N06S3L-06 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Description: MOSFET N-CH 55V 80A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
товару немає в наявності
В кошику
од. на суму грн.
| IPB80N06S3L-06 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 80A TO263-3
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.