| Кількість | Ціна |
|---|---|
| 2+ | 206.40 грн |
| 10+ | 164.54 грн |
| 25+ | 141.67 грн |
| 100+ | 103.61 грн |
| 500+ | 86.69 грн |
| 1000+ | 85.99 грн |
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Технічний опис IPB80P03P4L04ATMA2 Infineon Technologies
Description: MOSFET P-CH 30V 80A TO263-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +5V, -16V, Part Status: Active, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2V @ 253µA, Power Dissipation (Max): 137W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IPB80P03P4L04ATMA2 за ціною від 126.73 грн до 286.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPB80P03P4L04ATMA2 | Infineon Technologies |
 Description: MOSFET P-CH 30V 80A TO263-3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +5V, -16V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2V @ 253µA Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 442 шт: термін постачання 21-31 дні (днів) |
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| IPB80P03P4L04ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 442 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 286.25 грн |
| 10+ | 180.81 грн |
| 100+ | 126.73 грн |