IPB90N04S402ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 40V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 225.67 грн |
| 10+ | 141.13 грн |
| 100+ | 97.67 грн |
| 500+ | 76.90 грн |
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Технічний опис IPB90N04S402ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 90A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 95µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPB90N04S402ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPB90N04S402ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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IPB90N04S402ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 90A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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IPB90N04S402ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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IPB90N04S402ATMA1 | Виробник : Infineon Technologies |
MOSFETs N |
товару немає в наявності |
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| IPB90N04S402ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: D2PAK; TO263AB Mounting: SMD Kind of channel: enhancement Gate charge: 118nC Drain current: 90A Power dissipation: 150W Application: automotive industry |
товару немає в наявності |