| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.62 грн |
| 10+ | 155.60 грн |
| 100+ | 95.27 грн |
| 500+ | 82.15 грн |
| 1000+ | 74.56 грн |
| 2000+ | 69.72 грн |
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Технічний опис IPB95R450PFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.5V @ 360µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IPB95R450PFD7ATMA1 за ціною від 89.22 грн до 264.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB95R450PFD7ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 950V 13.3A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 360µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 865 шт: термін постачання 21-31 дні (днів) |
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| IPB95R450PFD7ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.06 грн |
| 10+ | 166.48 грн |
| 100+ | 116.44 грн |
| 500+ | 89.22 грн |