IPBE65R075CFD7AATMA1 Infineon Technologies
на замовлення 830 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 665.93 грн |
| 10+ | 446.64 грн |
| 100+ | 304.02 грн |
| 250+ | 285.02 грн |
| 500+ | 270.58 грн |
| 1000+ | 247.02 грн |
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Технічний опис IPBE65R075CFD7AATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 820µA, Supplier Device Package: PG-TO263-7-3-10, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V, Qualification: AEC-Q101.
Інші пропозиції IPBE65R075CFD7AATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPBE65R075CFD7AATMA1 | Виробник : Infineon Technologies |
 N-Channel MOSFET Transistor |
товару немає в наявності |
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IPBE65R075CFD7AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 32A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-TO263-7-3-10 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
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IPBE65R075CFD7AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 32A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-TO263-7-3-10 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |