IPBE65R230CFD7AATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 11A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-7-3-10, Vgs(th) (Max) @ Id: 4.5V @ 260µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.