IPBE65R230CFD7AATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Відгуки про товар
Написати відгук
Технічний опис IPBE65R230CFD7AATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-7-3-10, Vgs(th) (Max) @ Id: 4.5V @ 260µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції IPBE65R230CFD7AATMA1 за ціною від 88.36 грн до 287.53 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPBE65R230CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-7-3-10 Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IPBE65R230CFD7AATMA1 | Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
на замовлення 664 шт: термін постачання 21-30 дні (днів) |
|
| IPBE65R230CFD7AATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 650V 11A TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.85 грн |
| 10+ | 158.02 грн |
| 100+ | 110.60 грн |
| 500+ | 91.61 грн |
| IPBE65R230CFD7AATMA1 |
|
Виробник: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
MOSFETs AUTOMOTIVE_COOLMOS
на замовлення 664 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.53 грн |
| 10+ | 186.56 грн |
| 100+ | 113.22 грн |
| 500+ | 94.58 грн |
| 1000+ | 88.36 грн |