Технічний опис IPC70N04S5-4R6 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 70A, Power dissipation: 50W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 4.6mΩ, Mounting: SMD, Kind of channel: enhancement, Gate charge: 24.2nC, Technology: OptiMOS™ 5.
Інші пропозиції IPC70N04S5-4R6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPC70N04S5-4R6 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 24.2nC Technology: OptiMOS™ 5 |
товару немає в наявності |