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Технічний опис IPC90N04S5L-3R3 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8, Type of transistor: N-MOSFET, Drain-source voltage: 40V, Drain current: 90A, Power dissipation: 62W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 3.3mΩ, Mounting: SMD, Kind of channel: enhancement, Technology: OptiMOS™ 5, Polarisation: unipolar, Gate charge: 40nC.
Інші пропозиції IPC90N04S5L-3R3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPC90N04S5L-3R3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Polarisation: unipolar Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IPC90N04S5L-3R3 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 40nC
товару немає в наявності
В кошику
од. на суму грн.