IPD023N03LF2SATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
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Технічний опис IPD023N03LF2SATMA1 Infineon Technologies
Description: IPD023N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V, Power Dissipation (Max): 3W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 60µA, Supplier Device Package: PG-TO252-3-34, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V.
Інші пропозиції IPD023N03LF2SATMA1 за ціною від 23.61 грн до 122.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IPD023N03LF2SATMA1 | Infineon Technologies |
MOSFETs Addresses a broad range of applications from low- to high-switching frequency |
на замовлення 3929 шт: термін постачання 21-30 дні (днів) |
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IPD023N03LF2SATMA1 | Infineon Technologies |
Description: IPD023N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
| IPD023N03LF2SATMA1 |
|
Виробник: Infineon Technologies
MOSFETs Addresses a broad range of applications from low- to high-switching frequency
MOSFETs Addresses a broad range of applications from low- to high-switching frequency
на замовлення 3929 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.53 грн |
| 10+ | 68.20 грн |
| 100+ | 39.56 грн |
| 500+ | 32.45 грн |
| 1000+ | 29.41 грн |
| 2000+ | 24.92 грн |
| 4000+ | 23.61 грн |
| IPD023N03LF2SATMA1 |
|
Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.71 грн |
| 10+ | 74.86 грн |
| 100+ | 50.13 грн |
| 500+ | 37.09 грн |
| 1000+ | 33.89 грн |