IPD023N04NF2SATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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Технічний опис IPD023N04NF2SATMA1 Infineon Technologies
Description: TRENCH .
Інші пропозиції IPD023N04NF2SATMA1 за ціною від 35.44 грн до 127.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPD023N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 81µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V |
на замовлення 2084 шт: термін постачання 21-31 дні (днів) |
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| IPD023N04NF2SATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
на замовлення 2084 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 127.66 грн |
| 10+ | 77.96 грн |
| 100+ | 52.30 грн |
| 500+ | 38.76 грн |
| 1000+ | 35.44 грн |