IPD030N03LF2SATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 160A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V, Power Dissipation (Max): 3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 40µA, Supplier Device Package: PG-TO252-3-34, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V.