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IPD038N06N3GATMA1 Infineon Technologies

Name: IPD038N06N3GATMA1
Brand: Infineon Technologies
SKU: 61358-7
Price: 44.33 UAH
Availability: InStock

Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R

на замовлення 2500 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
2500+	44.33 грн

Мінімальне замовлення: 2500

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Технічний опис IPD038N06N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V.

Інші пропозиції IPD038N06N3GATMA1

Назва	Виробник	Інформація	Доступність
IPD038N06N3GATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3 Power dissipation: 188W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 90A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт	товар відсутній
IPD038N06N3GATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 60V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V	товар відсутній
IPD038N06N3GATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 60V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V	товар відсутній
IPD038N06N3GATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3 Power dissipation: 188W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 90A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET	товар відсутній