IPD046N08N5ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 90A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.8V @ 65µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).