Технічний опис IPD06N03LBG infineon
Description: MOSFET N-CH 30V 50A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 40µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD06N03LBG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPD06N03LB G | Infineon Technologies |
 Description: MOSFET N-CH 30V 50A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IPD06N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPD06N03LB G | Infineon Technologies |
MOSFET N-Ch 30V 50A DPAK-2 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD06N03LB G |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IPD06N03LB G |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPD06N03LB G |
|
Виробник: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2
MOSFET N-Ch 30V 50A DPAK-2
товару немає в наявності
В кошику
од. на суму грн.