IPD082N10N3GATMA1

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V

Виробник: Infineon Technologies
MOSFETs IFX FET >80 - 100V