IPD110N12N3GATMA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IPD110N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 80.09 грн |
| 500+ | 63.07 грн |
| 1000+ | 57.02 грн |
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Технічний опис IPD110N12N3GATMA1 INFINEON
Description: INFINEON - IPD110N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 120V, rohsCompliant: YES, Dauer-Drainstrom Id: 75A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 136W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.011ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції IPD110N12N3GATMA1 за ціною від 56.81 грн до 221.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPD110N12N3GATMA1 | INFINEON |
Description: INFINEON - IPD110N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 24343 шт: термін постачання 21-31 дні (днів) |
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IPD110N12N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 75A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 83µA (Typ) Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V |
на замовлення 2623 шт: термін постачання 21-31 дні (днів) |
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IPD110N12N3GATMA1 | Infineon Technologies |
MOSFETs IFX FET >100-150V |
на замовлення 5252 шт: термін постачання 21-30 дні (днів) |
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IPD110N12N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 75A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 83µA (Typ) Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| IPD110N12N3GATMA1 |
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Виробник: INFINEON
Description: INFINEON - IPD110N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IPD110N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 24343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 165.28 грн |
| 50+ | 105.25 грн |
| 100+ | 81.82 грн |
| 500+ | 62.76 грн |
| 1000+ | 56.81 грн |
| IPD110N12N3GATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
на замовлення 2623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 191.10 грн |
| 10+ | 119.12 грн |
| 100+ | 81.71 грн |
| 500+ | 61.69 грн |
| 1000+ | 57.86 грн |
| IPD110N12N3GATMA1 |
|
Виробник: Infineon Technologies
MOSFETs IFX FET >100-150V
MOSFETs IFX FET >100-150V
на замовлення 5252 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 221.20 грн |
| 10+ | 140.23 грн |
| 100+ | 83.87 грн |
| 500+ | 67.87 грн |
| 1000+ | 63.01 грн |
| 2500+ | 60.62 грн |
| 5000+ | 59.13 грн |
| IPD110N12N3GATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)