| Кількість | Ціна |
|---|---|
| 3+ | 132.39 грн |
| 10+ | 85.92 грн |
| 100+ | 49.06 грн |
| 500+ | 40.03 грн |
| 1000+ | 36.58 грн |
| 2500+ | 32.28 грн |
| 5000+ | 31.65 грн |
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Технічний опис IPD18DP10LMATMA1 Infineon Technologies
Description: TRENCH >=100V PG-TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 2V @ 1.04mA, Power Dissipation (Max): 3W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD18DP10LMATMA1 за ціною від 38.00 грн до 132.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD18DP10LMATMA1 | Infineon Technologies |
 Description: TRENCH >=100V PG-TO252-3Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 2V @ 1.04mA Power Dissipation (Max): 3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
|
| IPD18DP10LMATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRENCH >=100V PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 132.42 грн |
| 10+ | 81.32 грн |
| 100+ | 54.83 грн |
| 500+ | 40.81 грн |
| 1000+ | 38.00 грн |