IPD30N08S2L21ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IPD30N08S2L21ATMA1 Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 80µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD30N08S2L21ATMA1 за ціною від 47.65 грн до 174.33 грн
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IPD30N08S2L21ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 18962 шт: термін постачання 21-31 дні (днів) |
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IPD30N08S2L21ATMA1 | Infineon Technologies |
MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS |
на замовлення 36653 шт: термін постачання 21-30 дні (днів) |
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| IPD30N08S2L21ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 18962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 99.12 грн |
| 10+ | 73.23 грн |
| 100+ | 61.42 грн |
| 500+ | 54.70 грн |
| 1000+ | 48.99 грн |
| IPD30N08S2L21ATMA1 |
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Виробник: Infineon Technologies
MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS
MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS
на замовлення 36653 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 174.33 грн |
| 10+ | 102.13 грн |
| 100+ | 64.84 грн |
| 500+ | 54.76 грн |
| 1000+ | 50.89 грн |
| 2500+ | 47.65 грн |